Modeling of submicron Si-MOSFET's for microwave applications with unique extraction of small-signal characteristic parameters

In this paper, a new small-signal equivalent model and an efficient paramet er extraction method (zero-g(m) method), based on the measured S-parameters , are proposed for microwave applications of submicron (L-g=0.6 mum) Si-MOS FET's. The ambiguity between the channel charging resistance R-gsi and the transconductance delay tau in conventional models (g(m)=g(mo)e(-j alpha pi) ) are also clarified. Without a conventional de-embedding process, which us es additional test patterns with exactly the same geometrical structures as the device under test. extrinsic parameters, including contact pads and in terconnection lines of the DUT, are uniquely extracted at zero-g(m) bias co ndition (V-GS \(gm=0) = -0.25 V, V-DS = 0 V) from 45 MHz to 30 GHz. For a s imple and accurate small-signal model for microwave applications, a nonline ar curve fitting of an analytical 2-port network parameter equation is empl oyed.