Low frequency noise spectroscopy for Schottky contacts

In this paper, we show that low-frequency noise observed in semiconductor d evices. in particular Schottky diodes. can be utilized to analyze spectrosc opically the distribution of the traps involved and thereby to diagnose spe cific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely. mobility and diffusivity fluctuation, ther mal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experime ntal results are analyzed to give useful information on the trap distributi on and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.