A study of the effect of UV laser annealing on a-SiC films for structure ordering

A UV laser annealing was: carried out on amorphous SiC films: which were de posited on Si substrate by using plasma-enhanced chemical-vapour deposition . Scanning electron microscope micrographs taken from the surfaces of the f ilms exhibited images of grains that were not presented before the UV laser treatment. Fourier-transformed infrared and X-ray diffraction experiments identified those grains as microcrystals: of SiC and Si transformed from th e amorphous state. Anger electron spectroscopy depth profiling analysis sho wed that there were more Si atoms than C atoms in the layer. The resistivit ies of films changed abruptly front 170 Omega cm to 226 k Omega cm after th e UV laser annealing.