Ci. Park et al., Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer, J KOR PHYS, 37(6), 2000, pp. 1007-1011
The metalorganic chemical-vapor deposition growth of GaN films on 3C SIC in
termediate lavers on Si(111) substrates was carried out using trimethylgall
ium and NH3. Single crystalline hexagonal GaN layers were grown successfull
y on Si-terminated SiC intermediate layers by using GaN, AlN, and a superla
ttice buffer layer. The surface morphology, the crystal quality, and the op
tical properties of the GaN film with a superlattice as a buffer layer were
extremely improved. The GaN films were characterized by using X-ray diffra
ction, photoluminescence, optical microscopy, scanning electron microscopy,
and atomic force microscopy. The minimum full widths at half maximun of th
e bound exiton peak was 20.39 meV at 5 K and 63.03 meV at 300 K. Also the r
oot-mean-square roughness of the GaN film grown under optimum growth condit
ions was only 4.21 A.