Nano-patterning of polythiophene derivatives containing electron transporting moiety by using AFM lithography

Citation
E. Bae et al., Nano-patterning of polythiophene derivatives containing electron transporting moiety by using AFM lithography, J KOR PHYS, 37(6), 2000, pp. 1026-1029
Citations number
12
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
37
Issue
6
Year of publication
2000
Pages
1026 - 1029
Database
ISI
SICI code
0374-4884(200012)37:6<1026:NOPDCE>2.0.ZU;2-2
Abstract
We report on nanolithography of polythiophene derivatives using an atomic f orce microscope (AFM) as an exposure tool. These films were prepared using a spin-coating method and a Langmuir-Blodgett method. Then, they were patte rned through localized degradation as a result of anodic reactions induced beneath the AFM tip. Novel polythiophene derivatives were synthesized by di rectly introducing an electron-transporting moiety on the side chain that c an accept electrons efficiently. We accomplished the anodization of polythi ophene derivatives under various conditions and obtained a pattern with a h igh resolution of 50 nm line-width. This result indicates that AFM anodizat ion of polythiophene derivatives was accomplished well because of an effici ent electron-accepting property.