Preparation of Pt/SrBi2Ta2O9/TiO2/Si structures for metal-ferroelectric-insulator-semiconductor field-effect-transistors

The Pt/SBT/TiO2 /Si structure has been proposed for metal-ferroelectric-ins ulator-semi-conductor field-effect-transistor (MFIS-FET) applications. Liqu id source misted chemical deposition was used to deposit a SrBi2.4Ta2O9 (SB T) thin film on a Si(100) substrate with a TiO2 buffer layer deposited by D C reactive sputtering. The capacitance of the Pt/SBT/TiO2/Si structure in t he accumulation region became larger with increasing oxygen content in the sputtering gas used for the TiO2 deposition. The Pt/SBT/TiO2/Si structure e xhibited a C-V hysteresis loop with a memory window of 1 V and could be app lied for MFIS-FET applications.