Field emission properties of nanocomposite carbon nitride films

A modified cathodic are technique has been used to deposit carbon nitride t hin films directly on n(+) Si substrates. Transmission electron microscopy showed that clusters of fullerene-like nanoparticles are embedded in the de posited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/mum. When the films were etched in an HF: NH4F solution for 10 min, the threshold field decreased to 2.6 V/mum. The r ole of the carbon nanoparticles in the field emission process and the influ ence of the chemical etching treatment are discussed. (C) 2000 American Vac uum Society. [S0734-211X(00)13606-6].