Influence of diamond film thickness on field emission characteristics

Citation
H. Ji et al., Influence of diamond film thickness on field emission characteristics, J VAC SCI B, 18(6), 2000, pp. 2710-2713
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
2710 - 2713
Database
ISI
SICI code
1071-1023(200011/12)18:6<2710:IODFTO>2.0.ZU;2-I
Abstract
Diamond films with various thicknesses (0.15-9 mum) were grown by microwave plasma chemical vapor deposition. The lowest threshold field strength for electron emission was 3 V/mum for the similar to1.5-mum-thick diamond film. The results were analyzed by effective emission areas and effective work f unction according to Fowler-Nordheim theory. It was found that the threshol d voltage was strongly affected by the ratio of (111) and (110) oriented gr ains in the films. The larger the fraction of (111) oriented grains, the lo wer the effective work function in agreement with the reported negative ele ctron affinity of (111) surfaces. (C) 2000 American Vacuum Society. [S0734- 211X(00)18106-5].