Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography

We have explored the application of polysubstituted derivatives of tripheny lene as high resolution, high etch durability electron beam resists. Room t emperature spin coating was used to produce films of the derivatives on sil icon substrates. Exposure to a 20 keV electron beam was found to alter the dissolution rate of these derivatives in various organic solvents. Doses of between similar to3 x 10(-4) and similar to2.5 x 10(-3) C/cm(2) substantia lly increased the solubility of the derivative hexapentyloxytriphenylene in polar solvents (positive tone behavior). Doses greater than similar to2.5 x 10(-3) C/cm(2) led to a decrease in solubility in both polar and nonpolar solvents (negative tone behavior). Other derivatives also demonstrated a r eduction in their dissolution rate for doses between similar to1.5 x 10(-3) and similar to6.5 x 10(-3) C/cm(2). The etch durabilities of the positive and negative tone patterns were found to be, respectively, similar to 25% l ess and similar to 70% greater than that of a conventional novolac based ne gative tone resist. Line and space patterns were defined in one of the resi sts with a resolution of similar to 14 nm and structures with an aspect rat io of similar to 50-1 were etched into silicon. (C) 2000 American Vacuum So ciety. [S0734-211X(00)13806-5].