Rp. Davis et Ra. Abreu, Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors, J VAC SCI B, 18(6), 2000, pp. 2794-2798
Semiconductor devices incorporating copper interconnects are set to revolut
ionize the performance and functionality of integrated circuits. Copper int
erconnects enable faster and more reliable circuitry at sub-0.25 mum dimens
ions with lower resistivity and excellent resistance to electromigration. N
umerous methodologies exist whereby copper can be deposited, with chemical
vapor deposition (CVD) being one such technique. A vacuum pumping system th
at effectively and efficiently handles the process byproducts from the CVD
precursor Cu(hfac)(TMVS) has been developed and qualified. It is shown that
a standard dry pump used in conjunction with additional apparatus in the v
acuum system results in the safe handling of process byproducts. The perfor
mance of each component of the vacuum system has been individually qualifie
d and the abatement performance of the overall system shows >99% destructio
n efficiency of process effluent. (C) 2000 American Vacuum Society. [S0734-
211X(00)10306-3].