CH4/H-2 reactive ion etching induced damage of InP

Electrical modifications of InP samples induced by reactive ion etching (RI E) with CH4/H-2 have been studied using (a) electrochemical capacitance-vol tage measurements, (b) current-voltage characteristics of Schottky diode st ructures, and jc) transient reflected microwave conductivity measurements. From the capacitance-voltage measurements we confirm a depletion of holes n ear the surface of the dry-etched p-InP sample and an accumulation of elect rons near the surface of the dry-etched n-InP sample. The hole concentratio n in p-InP sample can be recovered after a 400 degreesC, 1 min heat treatme nt in an Ar ambient. From the transient reflected microwave conductivity me asurements we reveal new information on the modification of charge carrier mobilities and kinetics caused by dry etching and subsequent annealing proc edures on p-InP, n-InP, and semi-insulating (Fe-doped) InP samples. The n-I nP sample shows a loss in electron mobility after RIE and annealing; the p- InP sample shows a weakly n-type behavior after RIE and recovers the p-type behavior after annealing. (C) 2000 American Vacuum Society;. [S0734-211X(0 0)18006-0].