A metal-ferroelectric-insulator-silicon (MFIS) structure using leaw-zircona
te-titanate (PZT) as the ferroelectric layer and Ta2O5 as the insulator lay
er is fabricated. This structure is studied for the potential application o
f nonvolatile memory devices. The Ta2O5 layer is used as a buffer layer to
minimize the out diffusion of silicon atoms during heat treatment processes
. High frequency capacitance-voltage measurements show a flat band voltage
shift of 13 V under a +/-15 V writing pulse. The interface-trap density D-i
t is measured by the conductance method. The MFIS capacitors are shown to h
ave a fatigue lifetime of 1 X 10(11) cycles and 5 X 10(7) cycles for 11.4 a
nd 15 V writing pulses, respectively. (C) 2000 American Vacuum Society. [S0
734-211X(00)04906-4].