Electron-beam direct writing using RD2000N for fabrication of nanodevices

A simple but potent method for electron-beam (EB) direct writing is introdu ced. This method is based on the use of negative electron-beam resist RD200 0N. The resist offers high sensitivity to EB exposure and high resistance t o halide plasma etching conditions, which is ideal for application in Si/Si O2 based nanodevice fabrication. Dot exposure shows that dots of a minimum diameter of 16 nm could be patterned using this resist. Linear arrays of do ts, connected to each other by very narrow constrictions, are patterned usi ng this resist. When transferred to a thin silicon-on-insulator layer, by r eactive ion etching, this structure forms a multiple tunnel junction. Memor y devices based on this multiple tunnel junction are fabricated. Memory ope ration is observed at 20 K. (C) 2000 American Vacuum Society. [S0734-211X(0 0)15606-9].