Patterning performance of EB-X3 x-ray mask writer

An intensive study of the patterning performance of the EB-X3 revealed that the placement accuracy of a written image was degraded by the thermal effe ct originating from the temperature difference between the stage and the pa lette. An optimal writing procedure consisting of two temperature stabiliza tion steps was developed. This procedure enables the EB-X3 to attain an ima ge placement accuracy of better than 10 nm (3 sigma). A critical dimension control of 7.4 nm (3 sigma) has been confirmed over a 25-mm-square field. ( C) 2000 American Vacuum Society. [S0734-211X(00)05606-7].