Implementation of real-time proximity effect correction in a raster shapedbeam tool

A method for real-time backscatter correction has been implemented in a 50 keV raster-scan electron-beam mask exposure system. The real-time nature of the correction makes it an attractive, user transparent feature with flexi bility to choose the correction algorithm and scattering parameters. This a rticle describes the correction algorithms and the hardware added to the da ta path. We compare simulated critical dimension (CD) linearity with result s from mask exposures in our new raster shaped beam proof-of-concept tool. Performance meets both throughput and CD linearity requirements for the 130 and 100 nm device generations. (C) 2000 American Vacuum Society. [S0734-21 1X(00)15306-5].