Focused ion beam patterning of III-V crystals at low temperature: A methodfor improving the ion-induced defect localization

Authors
Schneider, M Gierak, J Marzin, JY Gayral, B Gerard, JM
Citation
M. Schneider et al., Focused ion beam patterning of III-V crystals at low temperature: A methodfor improving the ion-induced defect localization, J VAC SCI B, 18(6), 2000, pp. 3162-3167
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3162 - 3167
Database
ISI
SICI code
1071-1023(200011/12)18:6<3162:FIBPOI>2.0.ZU;2-K
Abstract
In this study we have investigated the damage distribution induced by a foc used ion beam irradiation on a GaAlAs/GaAs heterostructure. The samples wer e kept at various temperatures during ion bombardment: room temperature (RT ), 80 and 22 K. The samples were then characterized, after being warmed up at RT, using photoluminescence (PL) experiments without any subsequent anne aling. Stable, reproducible, and localized modulation of the PL characteris tics of several GaAlAs/GaAs heterostructures are demonstrated. The defect l ocalization is found to be considerably improved for a sample kept at 22 K during irradiation. (C) 2000 American Vacuum Society. [S0734-211X(00)19106- 1].