Inter and intramembrane resist critical dimension uniformity across a SCALPEL mask

The use of chemically amplified (CA) resists in integrated circuit fabricat ion is accepted in semiconductor manufacturing as a way to achieve high res olution with excellent critical dimension (CD) control and etch selectivity . The use of CA resists for mask fabrication has not had as much favor due to resist storage stability issues and CD variations due to postexposure ba ke (PEB) sensitivities. One key component to the CD control on SCALPEL memb rane masks is the thermal uniformity of the membranes and baking environmen t during the FEB process. This article discusses the numerical models creat ed to predict temperature gradients within membranes and across membranes o n a 200 mm SCALPEL mask. Verifications of the model by comparison of simula tion results and actual CD data are also presented. (C) 2000 American Vacuu m Society. [S0734-211X(00)17206-3].