Stencil reticle repair for electron beam projection lithography

Repair of stencil reticles for electron beam projection lithography system is one of the critical issues on reticle manufacturing. Focused ion beam de position is studied as the method for repairing the clear defects of stenci l reticle. The film deposition of diamondlike carbon (DLC) across the stenc il pattern, on the sidewall of the stencil, and on the pre-etched slot patt ern is demonstrated. The deposited DLC films have good properties as the re pair material. Deposited patterns across the stencil pattern are imaged on the resist with the Nikon 100 kV experimental projection column. When the t hickness of the deposited DLC film is more than 0.5 mum and the contrast ap erture size of the projection column is 1.5 mad, the thickness of the depos ited pattern does not affect die critical dimension of the resist pattern i maged the repaired patterns. The profiles, the pattern size, and the electr on scattering properties of DLC films are stable for 100 kV electron beam c ontinuous irradiation (2 C/cm(2) dosage; corresponding to half-year dosage on electron beam stepper). Moreover, the repaired pattern is not damaged by the wet megasonic cleaning. (C) 2000 American Vacuum Society. [S0734-211X( 00)08206-8].