Characterization of field stitching in electron-beam lithography using moire metrology

Authors
Murphy, TE Mondol, MK Smith, HI
Citation
Te. Murphy et al., Characterization of field stitching in electron-beam lithography using moire metrology, J VAC SCI B, 18(6), 2000, pp. 3287-3291
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3287 - 3291
Database
ISI
SICI code
1071-1023(200011/12)18:6<3287:COFSIE>2.0.ZU;2-Z
Abstract
We describe a method for characterizing field stitching in e-beam lithograp hy systems. The method, which is based upon the moire principle, enables on e to measure interfield stitching errors to the nanometer level using only a conventional optical microscope. The technique is more sensitive than the commonly used vernier method, and it does not require the use of a coordin ate-measuring tool. Our experiments show that this technique can determine the interfield stitching to within 2 nm. (C) 2000 American Vacuum Society. [S0734-211X(00)00406-6].