Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight

Authors
Pain, L Higgins, C Scarfogliere, B Tedesco, S Dal'Zotto, B Gourgon, C Ribeiro, M Kusumoto, T Suetsugu, M Hanawa, R
Citation
L. Pain et al., Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight, J VAC SCI B, 18(6), 2000, pp. 3388-3395
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3388 - 3395
Database
ISI
SICI code
1071-1023(200011/12)18:6<3388:RLONTC>2.0.ZU;2-S
Abstract
The objective of this article was to study the resolution limits of differe nt negative tune chemically amplified resists from both commercial and expe rimental formulations. Process optimization has been done on all samples an d this work underlines the importance of the choice of bake temperature to push resists to their ultimate resolution. Furthermore, the influence of se veral compounds, such as the polymer matrix blend, molecular weight, and ph otoacid compound, is detailed to determine the influence of each parameter on the final formulation performance. (C) 2000 American Vacuum Society. [S0 734-211X(00)12606-X].