Nanoscale patterning of self-assembled monolayers with electrons

Citation
A. Golzhauser et al., Nanoscale patterning of self-assembled monolayers with electrons, J VAC SCI B, 18(6), 2000, pp. 3414-3418
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3414 - 3418
Database
ISI
SICI code
1071-1023(200011/12)18:6<3414:NPOSMW>2.0.ZU;2-D
Abstract
We show the fabrication of gold nanostructures using self-assembled monolay ers of aliphatic and aromatic thiols as positive and negative electron beam resists. We applied a simple and versatile proximity printing technique us ing focused ion beam structured stencil masks and low energy (300 eV) elect rons. We also used conventional e-beam lithography with a beam energy of 2. 5 keV and doses from 3500 to 80 000 muC/cm(2). Gold patterns were generated by wet etching in KCN/KOH and characterized by atomic force microscopy and scanning electron microscopy. The width of the finest lines is similar to 20 nm; their edge definition is limited by the isotropic etching process in the polycrystalline gold. (C) 2000 American Vacuum Society. [S0734-211X(00 )05906-0].