Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability

Methods for combining fast optical lithography and slower high-resolution c alixarene electron-beam lithography are presented. These methods rely on di viding the pattern into low-resolution and high-resolution components and e xposing each with optical and electron-beam lithography steps, respectively . Patterns produced in this way have a minimum linewidth of 15 nm, and arbi trarily large low-resolution features. Although the procedures take two ste ps, for many patterns the total exposure time is significantly lower then i t would be with a single step calixarene-only process. The optical and elec tron-beam exposures were aligned using SiGe zero-level alignment marks. A 5 nm misalignment between subsequent electron beam exposures is demonstrated . (C) 2000 American Vacuum Society. [S0734-211X(00)02906-1].