Roughness study of a positive tone high performance SCALPEL resist

In this article we discuss the line edge roughness of positive chemically a mplified resists exposed on the SCALPEL exposure system in terms of the ima ge formation process. The image formation process for a SCALPEL exposure on a positive chemically amplified resist has been simulated using discrete m odels from exposure through development. Key parameters have been identifie d that enable image formation simulations without the need of detailed mole cular models. Molecular models are needed though to obtain several of these parameters. Surface and line edge roughness, as measured by scanning elect ron microscopy and atomic force microscopy, have been simulated and compare d to experimental results. Results are consistent with a "percolation netwo rk formation for diffusion-reaction development" model for chemically ampli fied resists. (C) 2000 American Vacuum Society. [S0734-211X(00)12706-4].