Influence of developer and development conditions on the behavior of high molecular weight electron beam resists

Citation
Dg. Hasko et al., Influence of developer and development conditions on the behavior of high molecular weight electron beam resists, J VAC SCI B, 18(6), 2000, pp. 3441-3444
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3441 - 3444
Database
ISI
SICI code
1071-1023(200011/12)18:6<3441:IODADC>2.0.ZU;2-1
Abstract
The nature of the developer and development conditions of high molecular we ight electron beam resists is known to influence sensitivity, contrast, lin e edge roughness, and ultimate resolution. These resist characteristics are explained using a dissolution model based on reptation theory and predicti ons are compared with experimental results on high molecular weight poly(me thylmethacrylate) developed in a range of solvent mixtures and conditions, including ultrasonically assisted development. (C) 2000 American Vacuum Soc iety. [S0734-211X(00)08806-5].