High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon

Dry etching of 30 nm features was investigated for x-ray and integrated ele ctronics applications. These typically require etching of either a tungsten absorber layer or a silicon mold. Through the use of an inductively couple d plasma source and accurate control over substrate temperature it was poss ible to achieve highly anisotropic patterning of tungsten and silicon. Dens ely patterned features as small as 30 nm and at pitches of 70 nm were etche d in tungsten and silicon, to depths of 100 and 200 nm, respectively. (C) 2 000 American Vacuum Society. [S0734-211X(00)18406-9].