Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap

A new three-dimensional photonic crystal structure is designed to simplify fabrication. A calculation of the band structure predicts that this photoni c crystal has a complete photonic band gap in all directions. The entire th ree-dimensional periodic structure, except for the vertically drilled holes , is formed by automatic shaping during bias sputtering deposition. The fab rication technologies used to construct this photonic crystal are electron beam lithography, bias sputtering, and fluoride aas electron cyclotron reso nance etching. Our preliminary fabrication reveals that each technology can be controlled well enough to lead to the creation of a photonic band gap m aterial for an optical communication wavelength. (C) 2000 American Vacuum S ociety. [S0734-211X(00)07806-9].