Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining

Authors
Barth, W Debski, T Shi, F Hudek, P Kostic, I Rangelow, IW Biehl, S Iwert, T Grabiec, P Studzinska, K Mitura, S Bekh, II Lushkin, AE Il'chenko, LG Il'chenko, VV Haindl, G
Citation
W. Barth et al., Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining, J VAC SCI B, 18(6), 2000, pp. 3544-3548
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3544 - 3548
Database
ISI
SICI code
1071-1023(200011/12)18:6<3544:FECAWS>2.0.ZU;2-1
Abstract
An electron emission behavior of field emission arrays based on a new bulk/ surface silicon micromachining method of fabrication was studied, The proce ss developed is simple and allows self-aligned gate electrode formation. Th e field emission of the emitter tips is enhanced by a 50 nm diamond-like ca rbon (DLC) film formed by chemical vapor deposition. Detailed Raman, Auger, and transmission electron microscopy (TEM) investigations of the deposited DLC films will be presented. Results about the presence of nanocrystalline diamond obtained with Raman spectroscopy could not be confirmed by the TEM investigations (the nanocrystalline diamond is smaller than 10 nm). (C) 20 00 American Vacuum Society. [S0734-211X(00)17806-0].