C3N4 film deposited by synchrotron radiation assisted CVD

The CN, film has been deposited on silicon substrate by the synchrotron rad iation assisted CVD from highly pure nitrogen and CH,CN at temperature as l ower as 275 degreesC, and the film is only deposited on the synchrotron rad iation irradiated area. The XPS analysis shows that the N1s and C1s are loc ated at 398.5 and 284.5 eV, respectively, which are identical to the theory and experimental results of other groups. The structure of CN, at differen t depths implies that a transition layer exists between the film and substr ate. (C) 2000 Elsevier Science S.A. All rights reserved.