1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response

Authors
Saint-Girons, G Mereuta, A Gerard, JM Ramdane, A Sagnes, I
Citation
G. Saint-girons et al., 1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response, MAT SCI E B, 78(2-3), 2000, pp. 145-147
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
78
Issue
2-3
Year of publication
2000
Pages
145 - 147
Database
ISI
SICI code
0921-5107(200012)78:2-3<145:1MMEOL>2.0.ZU;2-U
Abstract
1.32 mum electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots (QDs) based P-N diodes is presented. High growth temperature of the upper claddi ng layer (670 degreesC) induces a significant degradation and blueshift of the QDs emission, showing the importance to maintain a low thermal budget d uring the entire growth step. (C) 2000 Elsevier Science S.A. All rights res erved.