High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Using high-resolution Laplace deep-level transient spectroscopy (DLTS), we have compared the electron emission characteristics of vacancy-related defe cts in silicon. The samples include material irradiated with high-energy pr otons, material implanted with a heavy ion and silicon irradiated with 2 Me V electrons. We show that in the proton- and electron-irradiated material t he DLTS peak in the region of the (--/-) state of the divacancy at E-c = 0. 23 eV contains only one feature. The DLTS peak at 250 K which contains the signal derived from the (-/0) state of the divacancy is much larger in ion- implanted silicon than in electron-irradiated silicon. The Laplace DLTS is able to resolve clearly the (-/0) divacancy state and the V-P defect, where as conventional DLTS shows only a broad peak in that region. (C) 2000 Elsev ier Science Ltd. All rights reserved.