HOLDING CHARACTERISTIC OF DARK STATE IN ANTIFERROELECTRIC LIQUID-CRYSTAL

Citation
H. Hayashi et al., HOLDING CHARACTERISTIC OF DARK STATE IN ANTIFERROELECTRIC LIQUID-CRYSTAL, JPN J A P 1, 33(9B), 1994, pp. 5494-5497
Citations number
13
Categorie Soggetti
Physics, Applied
Volume
33
Issue
9B
Year of publication
1994
Pages
5494 - 5497
Database
ISI
SICI code
Abstract
The holding characteristic of the dark state of antiferroelectric liqu id crystal (AFLC) displays have a crucial effect on the contrast ratio . We have studied the dependence of the transmittance in the dark stat e on the waveform of the applied voltage in multiplex driving for seve ral materials. The samples used were ycarbonyl)phenyl-4'-octyloxybiphe nyl-4-carboxylate (MHPOBC) and its homologues. It was found that the h olding characteristics of the dark state are affected by the applied w aveforms and the chemical structures such as the type of chiral radica l and the length of the alkyl chain.