a-C : H films deposited on crystalline silicon to masking it anisotropic etching by aqueous ethylenediamine solution

Amorphous hydrogenated carbon (a-C:H) thin films deposited by r.f. chemical vapor deposition were applied as mask to anisotropic etching of crystallin e silicon by aqueous solution of Ethylenediamine with Pyrocatechol (EDP). F ilms with thicknesses of approximately 100 nm were successfully patterned o n silicon slices by the Lift-off process. Then the masked samples were subm itted to one aqueous EDP solution during time intervals of 8, 16, 24 and 10 0 min at a temperature of 98 degreesC, The inspection showed well defined e tching pattern and absence of etch pits on the surface underneath the film indicating the high chemical resistance of the a-C:H film to the aqueous ED P solution. (C) 2000 Elsevier Science Ltd. All rights reserved.