Optical absorption and birefringence is GaAs/AlAs MQW structures due to intersubband electron transitions

Authors
Vorobjev, LE Danilov, SN Titkov, IE Firsov, DA Shalygin, VA Zhukov, AE Kovsh, AR Ustinov, VM Aleshkin, VY Andreev, BA Andronov, AA Demidov, EV
Citation
Le. Vorobjev et al., Optical absorption and birefringence is GaAs/AlAs MQW structures due to intersubband electron transitions, NANOTECHNOL, 11(4), 2000, pp. 218-220
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
218 - 220
Database
ISI
SICI code
0957-4484(200012)11:4<218:OAABIG>2.0.ZU;2-Y
Abstract
Optical absorption and birefringence due to intersubband electron transitio ns were investigated in GaAs/AlAs MQW structures. These structures are inte nded for creation of a mid-infrared laser of a new type. Experimental resul ts on electron redistribution between size-quantization levels under electr on heating were obtained up to an electric field of 3500 V cm(-1).