Molecular-beam-epitaxy-grown ZnTe/CdZnTe/ZnTe and ZnSe/ZnCdSe/ZnSe strained
single-quantum-well structures with non-doping layers were investigated by
cathodoluminescence (CL) and deep-level transient spectroscopy (DLTS). The
activation energies for deep levels in ZnTe and ZnSe buffer layers grown o
n GaAs were determined by the DLTS spectra. Moreover, an additional DLTS pe
ak that depends on the quantum well (QW) parameters and col relates with th
e QW emission line position in the CL spectra was observed. This peak is in
terpreted as an emission of electrons from a ground level in the QW. Obtain
ed DLTS and CL results were used for the estimation of the conduction band
offset parameter Q(c).