Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Molecular-beam-epitaxy-grown ZnTe/CdZnTe/ZnTe and ZnSe/ZnCdSe/ZnSe strained single-quantum-well structures with non-doping layers were investigated by cathodoluminescence (CL) and deep-level transient spectroscopy (DLTS). The activation energies for deep levels in ZnTe and ZnSe buffer layers grown o n GaAs were determined by the DLTS spectra. Moreover, an additional DLTS pe ak that depends on the quantum well (QW) parameters and col relates with th e QW emission line position in the CL spectra was observed. This peak is in terpreted as an emission of electrons from a ground level in the QW. Obtain ed DLTS and CL results were used for the estimation of the conduction band offset parameter Q(c).