Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Citation
Vi. Kozlovsky et al., Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE, NANOTECHNOL, 11(4), 2000, pp. 241-245
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
241 - 245
Database
ISI
SICI code
0957-4484(200012)11:4<241:BAIZAZ>2.0.ZU;2-R
Abstract
Molecular-beam-epitaxy-grown ZnTe/CdZnTe/ZnTe and ZnSe/ZnCdSe/ZnSe strained single-quantum-well structures with non-doping layers were investigated by cathodoluminescence (CL) and deep-level transient spectroscopy (DLTS). The activation energies for deep levels in ZnTe and ZnSe buffer layers grown o n GaAs were determined by the DLTS spectra. Moreover, an additional DLTS pe ak that depends on the quantum well (QW) parameters and col relates with th e QW emission line position in the CL spectra was observed. This peak is in terpreted as an emission of electrons from a ground level in the QW. Obtain ed DLTS and CL results were used for the estimation of the conduction band offset parameter Q(c).