A giant shot of radiation intensity as eventual evidence of Bose-Einstein condensation of excitons in double quantum wells in GaBs/AlGaAs

Citation
Vv. Krivolapchuk et al., A giant shot of radiation intensity as eventual evidence of Bose-Einstein condensation of excitons in double quantum wells in GaBs/AlGaAs, NANOTECHNOL, 11(4), 2000, pp. 246-251
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
246 - 251
Database
ISI
SICI code
0957-4484(200012)11:4<246:AGSORI>2.0.ZU;2-P
Abstract
In this paper we present a low-temperature (T < 30 K) photoluminescence (PL study of space-indirect excitons in GaAs/AlGaAs double quantum wells at pu mping density P and external electric field V-dc. At certain external param eter values(P, T and V-dc) part of the spectral profile of the indirect exc iton (IX) line reveals an enormous increase (shot) of PL intensity (threefo ld), which fluctuates in time on the characteristic scale of tens of second s. To explain this anomalous behaviour we use the theoretical model of the Bose-Einstein condensation effect which takes place in a system of 2D boson s which, in addition to extended stares, have a discrete energy spectrum be low the bottom of the free zone.