In this paper, regular three-dimensional systems of GaN, InN and InGaN nano
clusters have been fabricated for the first time in a void sublattice of ar
tificial opal. The opal consisted of 220 nm diameter close packed amorphous
silica spheres and had a regular sublattice of voids accessible to filling
by other substances. GaN, InN and InGaN were synthesized directly in the o
pal voids from precursors such as metal salts and nitrogen hydrides. The co
mposites' structures have been characterized using x-ray diffraction, Raman
spectroscopy, atomic force microscopy and optical measurements.