The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping

The Si+-dose dependence of the photoluminescence (PL) intensity at lambda a pproximate to 800 nm for SiO2 with Si nanoinclusions (NIs) produced by ion implantation is studied. It is shown that this dependence is determined by the increase of the surface density of NIs, the mean size of NIs bring cons tant until they overlap. Doping by phosphorus enhances the PL due to the jo int action of two mechanisms: (i) the supply of additional electrons from t he donors to the conduction band of quantum dots and (ii) the passivation o f dangling bonds by phosphorus atoms.