Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode

Authors
Vitusevich, SA Forster, A Reetz, W Luth, H Belyaev, AE Danylyuk, SV
Citation
Sa. Vitusevich et al., Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode, NANOTECHNOL, 11(4), 2000, pp. 305-308
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
305 - 308
Database
ISI
SICI code
0957-4484(200012)11:4<305:FSOPSI>2.0.ZU;2-X
Abstract
The photoresponsivity spectra of double-barrier resonant tunnelling diodes have been measured in a wide range of light wavelength as well as applied v oltage. The complex behaviour of measured spectra is analysed, taking into account different channels for electron injection into the quantum well (QW ). The results obtained yield evidence for modulated electron-hole (e-h) re combination in the QW provided by direct excitation of e-h pairs in the QW.