The effect of deuterium on the optical properties of free-standing porous silicon layers

Citation
T. Matsumoto et al., The effect of deuterium on the optical properties of free-standing porous silicon layers, NANOTECHNOL, 11(4), 2000, pp. 340-347
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
340 - 347
Database
ISI
SICI code
0957-4484(200012)11:4<340:TEODOT>2.0.ZU;2-O
Abstract
We report our recent results of the effect of deuterium termination on the optical properties of porous Si nanostructures. The photoluminescence (PL) spectrum of deuterium-terminated porous Si (D-PS) was different from that o f ordinary hydroen-terminated porous Si (H-PS) although H-PS and D-PS show the same structure and the same absorption spectrum. We quantitatively disc uss these results based on the trapping of conduction electrons at a surfac e Si-H or Si-D. Ln addition to these basic results, we also show that the r eplacement of hydrogen with deuterium reduces the PL degradation. Surface t ermination, especially photo-induced oxidation of the surface, was precisel y studied hv Fourier transform infrared absorption measurements.