Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures

Authors
Aleshkin, VY Andreev, BA Gavrilenko, VI Erofeeva, IV Kozlov, DV Kuznetsov, OA
Citation
Vy. Aleshkin et al., Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures, NANOTECHNOL, 11(4), 2000, pp. 348-350
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
348 - 350
Database
ISI
SICI code
0957-4484(200012)11:4<348:RASIGM>2.0.ZU;2-3
Abstract
A new nonvariational theoretical approach allowing us to calculate both the localized and the continuum states of charge carriers in quantum well hete rostructures in the presence of the Coulomb potential has been developed. T he method has been used to calculate the energy spectra of shallow accepter s in strained Ge/GeSi multiple-quantum-well heterostructures. Optical trans itions from the acceptor ground states to the resonant states have been rev ealed in the measured far-infrared photoconductivity spectra of the heteros tructures.