Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures

Citation
Gm. Minkov et al., Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures, NANOTECHNOL, 11(4), 2000, pp. 406-410
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
11
Issue
4
Year of publication
2000
Pages
406 - 410
Database
ISI
SICI code
0957-4484(200012)11:4<406:ITANMI>2.0.ZU;2-E
Abstract
The weak-localization correction to the conductivity in coupled double-quan tum-well structures is studied both experimentally and theoretically. The s tatistics of closed paths has been obtained from the analysis of magnetic f ield and temperature dependences of negative magnetoresistance for a magnet ic field perpendicular and parallel to the structure plane. The comparison of experimental data with the results of computer simulation of carrier mot ion over two 2D layers with scattering shows that inter-layer transitions p lay a decisive role in the weak localization.