CRYSTALLIZING PROCESS OF AMORPHOUS THICK-FILMS OF FERROELECTRIC LEAD GERMANATE FAMILY

Citation
J. Hatano et al., CRYSTALLIZING PROCESS OF AMORPHOUS THICK-FILMS OF FERROELECTRIC LEAD GERMANATE FAMILY, JPN J A P 1, 33(9B), 1994, pp. 5521-5524
Citations number
12
Categorie Soggetti
Physics, Applied
Volume
33
Issue
9B
Year of publication
1994
Pages
5521 - 5524
Database
ISI
SICI code
Abstract
Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGS O) is carried out using a high-temperature X-ray diffraction system. T wo irreversible phase transitions took place near 370 degrees C and 53 0 degrees C on heating: the first is the crystallization from the amor phous to a metastable crystal state, and the second is from the metast able to a ferroelectric stable state of Pb5Ge3O11. Both transitions we re completed very quickly, i.e., within approximately 7 and 58 min, re spectively. The optimum heat-treatment conditions for fabricating well -oriented polycrystalline films were discussed together with the resul ts of quick heating and quenching experiments.