CHARGE STORAGE ON THIN SRTIO3 FILM BY CONTACT ELECTRIFICATION

Citation
T. Uchihashi et al., CHARGE STORAGE ON THIN SRTIO3 FILM BY CONTACT ELECTRIFICATION, JPN J A P 1, 33(9B), 1994, pp. 5573-5576
Citations number
8
Categorie Soggetti
Physics, Applied
Volume
33
Issue
9B
Year of publication
1994
Pages
5573 - 5576
Database
ISI
SICI code
Abstract
Charge storage on thin SrTiO3 (STO) film was investigated by contact e lectrification. An atomic force microscope (AFM) biased by the voltage was used to deposit the charges by contact electrification and to det ect electrostatic force change induced by contact electrified charges. As a result, writing, reading and erasing were demonstrated successfu lly with a small pattern, small letters and small dot arrays. Besides, two adjacent positive charge dots were discriminated with separation as small as similar to-63 nm. These results revealed the potential cap ability of the present system, i.e., contact electrification on STO fi lm with a biased AFM, for high-density charge storage.