Phonons on II-VI (110) semiconductor surfaces

Citation
Hm. Tutuncu et al., Phonons on II-VI (110) semiconductor surfaces, PHYS REV B, 62(23), 2000, pp. 15797-15805
Citations number
47
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
23
Year of publication
2000
Pages
15797 - 15805
Database
ISI
SICI code
0163-1829(200012)62:23<15797:POI(SS>2.0.ZU;2-9
Abstract
We have studied the phonon dispersion and density-of-states on the (110) su rface of LI-VT compounds CdTe, ZnTe, and ZnS in their zinc-blende phase by applying the adiabatic bond charge model. The relaxed surface atomic geomet ry and the corresponding bond charge information is obtained from the appli cation of an ab initio pseudopotential calculation. The origins of various surface phonon modes are discussed and their variation for different compou nds are analyzed in terms of the reduced mass and total mass differences. F urthermore, we have related some differences between surface modes on II-VI (110) and III-V (110) in terms of the ionicity factor.