T. Abukawa et al., Direct method of surface structure determination by Patterson analysis of correlated thermal diffuse scattering for Si(001)2X1, PHYS REV B, 62(23), 2000, pp. 16069-16073
A simple oscillatory intensity variation in medium-energy electron diffract
ion found recently [Abukawa ei al., Phys. Rev. Lett. 82, 335 (1999)] was te
rmed correlated thermal diffuse scattering (CTDS). The potential of CTDS as
a direct surface structural tool has been fully explored for the Si(001)2
X 1 surface at 300 K in a very-grazing-incidence condition. Nearly 2 pi sol
id-angle, three-dimensional (3D) CTDS patterns were measured for an energy
range of 500-2000 eV. The 3D Patterson functions obtained by Fourier invers
ion of the measured CTDS patterns clearly revealed the building blocks of t
he Si(001)2 X 1 surface, i.e., the bond orientations and lengths of the buc
kled Si dimers, within an accuracy of 1 degrees and 0.1 Angstrom, respectiv
ely.