Direct method of surface structure determination by Patterson analysis of correlated thermal diffuse scattering for Si(001)2X1

Citation
T. Abukawa et al., Direct method of surface structure determination by Patterson analysis of correlated thermal diffuse scattering for Si(001)2X1, PHYS REV B, 62(23), 2000, pp. 16069-16073
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
23
Year of publication
2000
Pages
16069 - 16073
Database
ISI
SICI code
0163-1829(200012)62:23<16069:DMOSSD>2.0.ZU;2-R
Abstract
A simple oscillatory intensity variation in medium-energy electron diffract ion found recently [Abukawa ei al., Phys. Rev. Lett. 82, 335 (1999)] was te rmed correlated thermal diffuse scattering (CTDS). The potential of CTDS as a direct surface structural tool has been fully explored for the Si(001)2 X 1 surface at 300 K in a very-grazing-incidence condition. Nearly 2 pi sol id-angle, three-dimensional (3D) CTDS patterns were measured for an energy range of 500-2000 eV. The 3D Patterson functions obtained by Fourier invers ion of the measured CTDS patterns clearly revealed the building blocks of t he Si(001)2 X 1 surface, i.e., the bond orientations and lengths of the buc kled Si dimers, within an accuracy of 1 degrees and 0.1 Angstrom, respectiv ely.