Temperature-dependent Raman scattering studies in nanocrystalline silicon and finite-size effects

Citation
P. Mishra et Kp. Jain, Temperature-dependent Raman scattering studies in nanocrystalline silicon and finite-size effects, PHYS REV B, 62(22), 2000, pp. 14790-14795
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
22
Year of publication
2000
Pages
14790 - 14795
Database
ISI
SICI code
0163-1829(200012)62:22<14790:TRSSIN>2.0.ZU;2-9
Abstract
A comparative study of the temperature-dependent Raman scattering of nanocr ystalline and bulk silicon is presented. The nanocrystalline silicon sample s were made by a cw laser annealing process, and the characteristic dimensi ons were determined with a phenomenological phonon confinement model. Exper imental results indicate a higher degree of anharmonicity in nanocrystals c ompared to that in the bulk. The anharmonic constants are found to be highl y size dependent and increase greatly with decreasing dimensions. The phono n lifetimes have two contributions, one temperature dependent and the other temperature independent, both decreasing rapidly with decreasing nanocryst al size. The temperature-dependent term tau (0) is important for larger nan ocrystals, while the temperature-independent term tau (1) becomes dominant for nanocrystals of sizes less than 4 nm.