Kk. Hirakuri et al., THIN-FILM CHARACTERIZATION OF DIAMOND-LIKE CARBON-FILMS PREPARED BY RF PLASMA CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 302(1-2), 1997, pp. 5-11
Using atomic force microscopy and infrared spectroscopy, diamond-like
carbon films deposited by r.f. plasma discharge were investigated. Har
dness and roughness of the films strongly depend on the bias voltage o
f the substrates and thus the pressure in the deposition chamber. At h
igher pressures, the surface roughness of the films increases with the
ir thickness. For films deposited at medium pressures, the roughness i
s almost constant regardless of the film thickness. At pressures below
53 Pa decreasing roughness is observed and hard films are obtained. T
hese findings can be explained by the predominance of different specie
s in the plasma. At low pressure, ionic species an accelerated towards
sharp tips on the film surface leading to sputter removal of weakly b
ond material in these regions. At higher pressure neutral species in t
he plasma dominate. Thus, the balancing effect of sputtering is not ob
served. Hydrogen content and sp(3)/sp(2) ratios obtained from IR spect
ra revealed that the lower hardness of the rough surfaces can be expla
ined by a higher content of sp(2) species in the films deposited at hi
gh pressure. Whereas the intensity ratio of sp(3)/sp(2) is almost cons
tant for the films at higher pressure preferred sputter removal of sp(
2) species leads to a significant increase of that ratio at low pressu
re. (C) 1997 Elsevier Science S.A.