Cadmium sulfide thin films have been deposited by electrodeposition us
ing the potentiostatic method on indium tin oxide (ITO)-coated glass s
ubstrates from aqueous solution containing CdCl2 . 2H(2)O and Na2S2O3
at 90 degrees C. The depositions were carried out for various cathodic
potentials. Good quality films were obtained at a cathodic potential
of -0.6 V. Voltammograms have been recorded to optimize the co-deposit
ion region of CdS on ITO-coated glass substrates at 90 degrees C. The
structural and optical characterisations have been carried out using a
n X-ray diffractometer and UV-Vis spectrophotometry. Annealing the sam
ples at 350 degrees C in H-2 for 30 min resulted in increase in intens
ity as well as a shift towards lower scattering angles due to the latt
ice parameter increase from enlarged CdS cell. A bandgap narrowing was
also observed as a consequence of annealing. (C) 1997 Elsevier Scienc
e S.A.