The paper is concerned with the polarization processes in the amorphou
s anodic oxide films on Al, Ta and Nb. The conditions of oxide product
ion are selected so that anodic oxide films do not incorporate any cry
stallites. It is shown that the analysis of the frequency characterist
ics of a planar metal/oxide/metal system (MOM system) with such a film
provides a way for separating the deformation polarization of electro
nic and ionic displacement and relaxation polarization as well as the
loss due to ohmic conductivity. The relaxation polarization is shown t
o be responsible for the permittivity dispersion and the amount of die
lectric loss. (C) 1997 Elsevier Science S.A.