Preparation of oxide thin films by controlled diffusion of oxygen atoms

Authors
Rosenstock, Z Riess, I
Citation
Z. Rosenstock et I. Riess, Preparation of oxide thin films by controlled diffusion of oxygen atoms, SOL ST ION, 136, 2000, pp. 921-926
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
136
Year of publication
2000
Pages
921 - 926
Database
ISI
SICI code
0167-2738(200011)136:<921:POOTFB>2.0.ZU;2-Y
Abstract
A new method for preparing thin oxide films is described. It makes use of s low diffusion of oxygen through a permeable layer, towards the metal to be oxidized. We have used this method to oxidize copper. The permeable layer i s a dense silver film. The formation of the oxide was followed in situ in a n attempt to measure the resistance of the cell. (C) 2000 Elsevier Science B.V. All lights reserved.